- Product Model IPN80R2K4P7ATMA1
- Brand IR (Infineon Technologies)
- RoHS Yes
- Description MOSFET N-CH 800V 2.5A SOT223
- Classification Single FETs, MOSFETs
-
PDF
- 3000 0.32
- 6000 0.3
- 9000 0.28
- 30000 0.28
Technical Details
- Package / Case TO-261-4, TO-261AA
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 2.5A (Tc)
- Rds On (Max) @ Id, Vgs 2.4Ohm @ 800mA, 10V
- Power Dissipation (Max) 6.3W (Tc)
- Vgs(th) (Max) @ Id 3.5V @ 40µA
- Supplier Device Package PG-SOT223
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 800 V
- Gate Charge (Qg) (Max) @ Vgs 7.5 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 150 pF @ 500 V
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