- Product Model IPN80R3K3P7ATMA1
- Brand IR (Infineon Technologies)
- RoHS Yes
- Description MOSFET N-CH 800V 1.9A SOT223
- Classification Single FETs, MOSFETs
-
PDF
- 3000 0.28
- 6000 0.27
- 9000 0.25
- 30000 0.25
Technical Details
- Package / Case TO-261-4, TO-261AA
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 1.9A (Tc)
- Rds On (Max) @ Id, Vgs 3.3Ohm @ 590mA, 10V
- Power Dissipation (Max) 6.1W (Tc)
- Vgs(th) (Max) @ Id 3.5V @ 30µA
- Supplier Device Package PG-SOT223
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 800 V
- Gate Charge (Qg) (Max) @ Vgs 5.8 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 120 pF @ 500 V
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