- Product Model IPD60R1K4C6ATMA1
- Brand IR (Infineon Technologies)
- RoHS Yes
- Description MOSFET N-CH 600V 3.2A TO252-3
- Classification Single FETs, MOSFETs
-
PDF
Inventory:21465
Pricing:
- 2500 0.37
- 5000 0.35
- 12500 0.34
- 25000 0.34
Technical Details
- Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 3.2A (Tc)
- Rds On (Max) @ Id, Vgs 1.4Ohm @ 1.1A, 10V
- Power Dissipation (Max) 28.4W (Tc)
- Vgs(th) (Max) @ Id 3.5V @ 90µA
- Supplier Device Package PG-TO252-3
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 600 V
- Gate Charge (Qg) (Max) @ Vgs 9.4 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 200 pF @ 100 V
Related Products
MOSFET N-CH 150V 9.6A/35A 8PQFN
Inventory: 19067
MOSFET N-CH 60V 50A TO252-31
Inventory: 16905
MOSFET N-CH 600V 18A TO252-3
Inventory: 4796
MOSFET N-CH 800V 2.5A SOT223
Inventory: 11597
DIODE GEN PURP 1KV 1A SMA
Inventory: 38535
