- Product Model TP65H070G4QS-TR
- Brand Transphorm
- RoHS Yes
- Description 650 V 29 A GAN FET
- Classification Single FETs, MOSFETs
-
PDF
- 2000 4.57
Technical Details
- Package / Case 8-PowerSFN
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology GaNFET (Gallium Nitride)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 29A (Tc)
- Rds On (Max) @ Id, Vgs 85mOhm @ 16A, 10V
- Power Dissipation (Max) 96W (Tc)
- Vgs(th) (Max) @ Id 4.8V @ 700µA
- Supplier Device Package TOLL
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 650 V
- Gate Charge (Qg) (Max) @ Vgs 8.4 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 600 pF @ 400 V
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