Technical Details

• Package / Case 8-VDFN Exposed Pad
• Mounting Type Surface Mount
• Operating Temperature -55°C ~ 150°C (TJ)
• Technology GaNFET (Gallium Nitride)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 6.5A (Tc)
• Rds On (Max) @ Id, Vgs 312mOhm @ 6.5A, 6V
• Power Dissipation (Max) 21W (Tc)
• Vgs(th) (Max) @ Id 2.8V @ 500µA
• Supplier Device Package 8-PQFN (8x8)
• Drive Voltage (Max Rds On, Min Rds On) 6V
• Vgs (Max) ±12V
• Drain to Source Voltage (Vdss) 650 V
• Gate Charge (Qg) (Max) @ Vgs 8.8 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds 730 pF @ 400 V