- Product Model TP65H300G4JSGB-TR
- Brand Transphorm
- RoHS No
- Description GANFET N-CH 650V 9.2A QFN5X6
- Classification Single FETs, MOSFETs
-
PDF
- 4000 1.56
Technical Details
- Package / Case 8-PowerTDFN
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology GaNFET (Gallium Nitride)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 9.2A (Tc)
- Rds On (Max) @ Id, Vgs 312mOhm @ 6.5A, 6V
- Power Dissipation (Max) 41.6W (Tc)
- Vgs(th) (Max) @ Id 2.8V @ 500µA
- Supplier Device Package 8-PQFN (5x6)
- Drive Voltage (Max Rds On, Min Rds On) 6V
- Vgs (Max) ±10V
- Drain to Source Voltage (Vdss) 650 V
- Gate Charge (Qg) (Max) @ Vgs 3.5 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 400 pF @ 400 V
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