- Product Model G04P10HE
- Brand Goford Semiconductor
- RoHS No
- Description MOSFET P-CH ESD 100V 4A SOT-223
- Classification Single FETs, MOSFETs
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Technical Details
- Package / Case TO-261-4, TO-261AA
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type P-Channel
- Current - Continuous Drain (Id) @ 25°C 4A (Tc)
- Rds On (Max) @ Id, Vgs 200mOhm @ 6A, 10V
- Power Dissipation (Max) 1.2W (Tc)
- Vgs(th) (Max) @ Id 2.8V @ 250µA
- Supplier Device Package SOT-223
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Vgs (Max) ±20V
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