- Product Model G04P10HE
- Brand Goford Semiconductor
- RoHS Yes
- Description P-100V,-4A,RD(MAX)<200M@-10V,VTH
- Classification Single FETs, MOSFETs
-
PDF
- 2500 0.18
- 5000 0.17
- 12500 0.16
- 25000 0.15
- 62500 0.15
Technical Details
- Package / Case TO-261-4, TO-261AA
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type P-Channel
- Current - Continuous Drain (Id) @ 25°C 4A (Tc)
- Rds On (Max) @ Id, Vgs 200mOhm @ 6A, 10V
- Power Dissipation (Max) 1.2W (Tc)
- Vgs(th) (Max) @ Id 2.8V @ 250µA
- Supplier Device Package SOT-223
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 100 V
- Gate Charge (Qg) (Max) @ Vgs 25 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 1647 pF @ 50 V
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