- Product Model G12P10TE
- Brand Goford Semiconductor
- RoHS Yes
- Description P-100V,-12A,RD(MAX)<200M@-10V,VT
- Classification Single FETs, MOSFETs
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Inventory:1537
Technical Details
- Package / Case TO-220-3
- Mounting Type Through Hole
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type P-Channel
- Current - Continuous Drain (Id) @ 25°C 12A (Tc)
- Rds On (Max) @ Id, Vgs 200mOhm @ 6A, 10V
- Power Dissipation (Max) 40W (Tc)
- Vgs(th) (Max) @ Id 3V @ 250µA
- Supplier Device Package TO-220
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 100 V
- Gate Charge (Qg) (Max) @ Vgs 25 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 760 pF @ 25 V