- Product Model G230P06T
- Brand Goford Semiconductor
- RoHS Yes
- Description P-60V,-60A,RD(MAX)<20M@-10V,VTH-
- Classification Single FETs, MOSFETs
-
PDF
- 1 0.96
- 50 0.77
- 100 0.61
- 500 0.52
- 1000 0.42
- 2000 0.4
- 5000 0.38
- 10000 0.36
Technical Details
- Package / Case TO-220-3
- Mounting Type Through Hole
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type P-Channel
- Current - Continuous Drain (Id) @ 25°C 60A (Tc)
- Rds On (Max) @ Id, Vgs 20mOhm @ 10A, 10V
- Power Dissipation (Max) 115W (Tc)
- Vgs(th) (Max) @ Id 4V @ 250µA
- Supplier Device Package TO-220
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 60 V
- Gate Charge (Qg) (Max) @ Vgs 62 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 4499 pF @ 30 V
Related Products
P-100V,-12A,RD(MAX)<200M@-10V,VT
Inventory: 37
P-60V,-32A,RD(MAX)<40M@-10V,VTH-
Inventory: 129
MOSFET P-CH 60V 32A TO-220
Inventory: 2000
MOSFET, P-CH, 40V,45A,TO-220
Inventory: 0
MOSFET P-CH 40V 45A TO-220
Inventory: 15000
P-60V,RD(MAX)<18M@-10V,VTH-2.0V~
Inventory: 123
MOSFET P-CH 60V 65A TO-220
Inventory: 10000
MOSFET, P-CH,-40V,-70A,RD(MAX)<7
Inventory: 52
MOSFET P-CH 40V 70A TO-220
Inventory: 1000
P-80V, -25A,RD<72M@-10V,VTH-2V~-
Inventory: 51
