- Product Model G700P06T
- Brand Goford Semiconductor
- RoHS Yes
- Description P-60V,25A,RD<70M@-10V,VTH1V~-2.5
- Classification Single FETs, MOSFETs
-
PDF
- 1 0.67
- 50 0.55
- 100 0.4
- 500 0.33
- 1000 0.28
- 2000 0.25
- 5000 0.24
- 10000 0.22
Technical Details
- Package / Case TO-220-3
- Mounting Type Through Hole
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type P-Channel
- Current - Continuous Drain (Id) @ 25°C 25A (Tc)
- Rds On (Max) @ Id, Vgs 70mOhm @ 4A, 10V
- Power Dissipation (Max) 100W (Tc)
- Vgs(th) (Max) @ Id 2.5V @ 250µA
- Supplier Device Package TO-220
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 60 V
- Gate Charge (Qg) (Max) @ Vgs 23 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 1428 pF @ 30 V
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