- Product Model IGLR60R190D1XUMA1
- Brand IR (Infineon Technologies)
- RoHS Yes
- Description GAN HV
- Classification Single FETs, MOSFETs
-
PDF
- 5000 2.79
Technical Details
- Package / Case 8-PowerTDFN
- Mounting Type Surface Mount
- Operating Temperature -40°C ~ 150°C (TJ)
- Technology GaNFET (Gallium Nitride)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 12.8A (Tc)
- Power Dissipation (Max) 55.5W (Tc)
- Vgs(th) (Max) @ Id 1.6V @ 960µA
- Supplier Device Package PG-TSON-8-6
- Vgs (Max) -10V
- Drain to Source Voltage (Vdss) 600 V
- Input Capacitance (Ciss) (Max) @ Vds 157 pF @ 400 V
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