- Product Model IMZA65R057M1HXKSA1
- Brand IR (Infineon Technologies)
- RoHS Yes
- Description SILICON CARBIDE MOSFET, PG-TO247
- Classification Single FETs, MOSFETs
-
PDF
- 1 11.33
- 30 9.17
- 120 8.63
- 510 7.82
- 1020 7.17
Technical Details
- Package / Case TO-247-4
- Mounting Type Through Hole
- Operating Temperature -55°C ~ 175°C (TJ)
- Technology SiCFET (Silicon Carbide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 35A (Tc)
- Rds On (Max) @ Id, Vgs 74mOhm @ 16.7A, 18V
- Power Dissipation (Max) 133W (Tc)
- Vgs(th) (Max) @ Id 5.7V @ 5mA
- Supplier Device Package PG-TO247-4-3
- Drive Voltage (Max Rds On, Min Rds On) 18V
- Vgs (Max) +20V, -2V
- Drain to Source Voltage (Vdss) 650 V
- Gate Charge (Qg) (Max) @ Vgs 28 nC @ 18 V
- Input Capacitance (Ciss) (Max) @ Vds 930 pF @ 400 V
Related Products
SILICON CARBIDE MOSFET PG-TO263-
Inventory: 0
SILICON CARBIDE MOSFET PG-TO263-
Inventory: 923
SILICON CARBIDE MOSFET PG-TO263-
Inventory: 822
SILICON CARBIDE MOSFET
Inventory: 1931
SILICON CARBIDE MOSFET
Inventory: 1934
SILICON CARBIDE MOSFET, PG-TO247
Inventory: 88
SILICON CARBIDE MOSFET, PG-TO247
Inventory: 60
MOSFET 650V NCH SIC TRENCH
Inventory: 631
MOSFET 650V NCH SIC TRENCH
Inventory: 460
MOSFET 650V NCH SIC TRENCH
Inventory: 240
