- Product Model IPD130N10NF2SATMA1
- Brand IR (Infineon Technologies)
- RoHS Yes
- Description MOSFET
- Classification Single FETs, MOSFETs
-
PDF
- 1 1.15
- 10 0.94
- 100 0.73
- 500 0.62
- 1000 0.51
- 2000 0.48
- 6000 0.45
- 10000 0.43
Technical Details
- Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 175°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 11A (Ta), 52A (Tc)
- Rds On (Max) @ Id, Vgs 13mOhm @ 30A, 10V
- Power Dissipation (Max) 3W (Ta), 71W (Tc)
- Vgs(th) (Max) @ Id 3.8V @ 30µA
- Supplier Device Package PG-TO252-3
- Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 100 V
- Gate Charge (Qg) (Max) @ Vgs 28 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 1300 pF @ 50 V
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