- Product Model IPD052N10NF2SATMA1
- Brand IR (Infineon Technologies)
- RoHS Yes
- Description MOSFET
- Classification Single FETs, MOSFETs
-
PDF
- 1 1.92
- 10 1.59
- 100 1.27
- 500 1.07
- 1000 0.91
- 2000 0.86
- 6000 0.83
- 10000 0.8
Technical Details
- Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 175°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 17A (Ta), 118A (Tc)
- Rds On (Max) @ Id, Vgs 5.2mOhm @ 70A, 10V
- Power Dissipation (Max) 3W (Ta), 150W (Tc)
- Vgs(th) (Max) @ Id 3.8V @ 84µA
- Supplier Device Package PG-TO252-3
- Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 100 V
- Gate Charge (Qg) (Max) @ Vgs 76 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 3600 pF @ 50 V
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