- Product Model IPB023N04NF2SATMA1
- Brand IR (Infineon Technologies)
- RoHS Yes
- Description TRENCH <= 40V
- Classification Single FETs, MOSFETs
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Inventory:2261
Pricing:
- 800 1.02
- 1600 0.86
- 2400 0.82
- 5600 0.79
Technical Details
- Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 175°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 30A (Ta), 122A (Tc)
- Rds On (Max) @ Id, Vgs 2.35mOhm @ 70A, 10V
- Power Dissipation (Max) 3.8W (Ta), 150W (Tc)
- Vgs(th) (Max) @ Id 3.4V @ 81µA
- Supplier Device Package PG-TO263-3
- Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 40 V
- Gate Charge (Qg) (Max) @ Vgs 102 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 4800 pF @ 20 V