- Product Model AIMBG120R010M1XTMA1
- Brand IR (Infineon Technologies)
- RoHS Yes
- Description SIC_DISCRETE
- Categories Single FETs, MOSFETs
-
PDF
- In Stock 2772
- 1000 35.45
Technical Details
- Package / Case TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 175°C
- Technology SiCFET (Silicon Carbide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 187A
- Supplier Device Package PG-TO263-7-12
- Drain to Source Voltage (Vdss) 1200 V
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant
Related Products
SIC_DISCRETE
In Stock: 2647
- 1000: 11.12
SICFET N-CH 1200V 90A TO247-3
In Stock: 1863
- 1: 98.34
- 30: 85.66
- 120: 81.21
SICFET N-CH 1200V 36A TO247-3
In Stock: 3085
- 1: 29.24
- 30: 24.24
- 120: 22.73
- 510: 19.39
SICFET N-CH 1200V 100A TO247-4L
In Stock: 2863
- 1: 41.02
- 30: 34.38
- 120: 32.08
SIC, MOSFET, 21M, 1200V, TO-247-
In Stock: 1500
- 1: 39.63
- 30: 33.21
- 120: 30.99
SICFET N-CH 650V 238A TO263-7
In Stock: 1960
- 1000: 30.24
SIC DISCRETE
In Stock: 1500
- 1: 74.6
- 30: 65.27
- 120: 60.61
SIC DISCRETE
In Stock: 1547
- 1: 77.19
- 30: 67.54
- 120: 62.71
SIC DISCRETE
In Stock: 1500
- 1: 41.55
- 30: 34.82
- 120: 32.49
