Inventory:2863
Pricing:
  • 1 41.02
  • 30 34.38
  • 120 32.08

Technical Details

  • Package / Case TO-247-4
  • Mounting Type Through Hole
  • Operating Temperature -40°C ~ 175°C (TJ)
  • Technology SiCFET (Silicon Carbide)
  • FET Type N-Channel
  • Current - Continuous Drain (Id) @ 25°C 100A (Tc)
  • Rds On (Max) @ Id, Vgs 28.8mOhm @ 50A, 15V
  • Power Dissipation (Max) 469W (Tc)
  • Vgs(th) (Max) @ Id 3.6V @ 17.7mA
  • Supplier Device Package TO-247-4L
  • Drive Voltage (Max Rds On, Min Rds On) 15V
  • Vgs (Max) +15V, -4V
  • Drain to Source Voltage (Vdss) 1200 V
  • Gate Charge (Qg) (Max) @ Vgs 162 nC @ 15 V
  • Input Capacitance (Ciss) (Max) @ Vds 4818 pF @ 1000 V

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