- Product Model G30N02T
- Brand Goford Semiconductor
- RoHS Yes
- Description N20V,RD(MAX)<13M@4.5V,VTH0.5V~1.
- Classification Single FETs, MOSFETs
-
PDF
- 1 0.62
- 50 0.51
- 100 0.37
- 500 0.31
- 1000 0.26
- 2000 0.23
- 5000 0.22
- 10000 0.21
Technical Details
- Package / Case TO-220-3
- Mounting Type Through Hole
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 30A (Tc)
- Rds On (Max) @ Id, Vgs 13mOhm @ 20A, 4.5V
- Power Dissipation (Max) 40W (Tc)
- Vgs(th) (Max) @ Id 1.2V @ 250µA
- Supplier Device Package TO-220
- Drive Voltage (Max Rds On, Min Rds On) 4.5V
- Vgs (Max) ±12V
- Drain to Source Voltage (Vdss) 20 V
- Gate Charge (Qg) (Max) @ Vgs 15 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 900 pF @ 10 V
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