- Product Model IMW120R040M1HXKSA1
- Brand IR (Infineon Technologies)
- RoHS Yes
- Description SIC DISCRETE
- Classification Single FETs, MOSFETs
-
PDF
- 1 14.99
- 30 12.14
- 120 11.42
- 510 10.35
- 1020 9.5
Technical Details
- Package / Case TO-247-3
- Mounting Type Through Hole
- Operating Temperature -55°C ~ 175°C (TJ)
- Technology SiCFET (Silicon Carbide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 55A (Tc)
- Rds On (Max) @ Id, Vgs 54.4mOhm @ 19.3A, 18V
- Power Dissipation (Max) 227W (Tc)
- Vgs(th) (Max) @ Id 5.2V @ 10mA
- Supplier Device Package PG-TO247-3
- Drive Voltage (Max Rds On, Min Rds On) 15V, 18V
- Vgs (Max) +20V, -5V
- Drain to Source Voltage (Vdss) 1200 V
- Gate Charge (Qg) (Max) @ Vgs 51 nC @ 18 V
- Input Capacitance (Ciss) (Max) @ Vds 1620 pF @ 800 V
Related Products
SIC_DISCRETE
Inventory: 1147
SIC_DISCRETE
Inventory: 28
LOW POWER EASY
Inventory: 19
SICFET N-CH 1.2KV 56A TO263
Inventory: 705
SIC DISCRETE
Inventory: 0
SICFET N-CH 1.2KV 26A TO263
Inventory: 1656
SICFET N-CH 1.2KV 36A TO247-4
Inventory: 261
SIC DISCRETE
Inventory: 7
SILICON CARBIDE (SIC) MOSFET ELI
Inventory: 115
SILICON CARBIDE POWER MOSFET 120
Inventory: 600
