Technical Details

• Package / Case 3-XDFN Exposed Pad
• Mounting Type Surface Mount
• Operating Temperature -55°C ~ 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• FET Type P-Channel
• Current - Continuous Drain (Id) @ 25°C 1.2A (Ta)
• Rds On (Max) @ Id, Vgs 447mOhm @ 1.2A, 4.5V
• Power Dissipation (Max) 360mW (Ta), 5.68W (Tc)
• Vgs(th) (Max) @ Id 950mV @ 250µA
• Supplier Device Package DFN1010D-3
• Drive Voltage (Max Rds On, Min Rds On) 1.2V, 4.5V
• Vgs (Max) ±8V
• Drain to Source Voltage (Vdss) 20 V
• Gate Charge (Qg) (Max) @ Vgs 2.3 nC @ 4.5 V
• Input Capacitance (Ciss) (Max) @ Vds 116 pF @ 10 V