Technical Details

• Package / Case 3-XFDFN
• Mounting Type Surface Mount
• Operating Temperature -55°C ~ 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• FET Type P-Channel
• Current - Continuous Drain (Id) @ 25°C 410mA (Ta)
• Rds On (Max) @ Id, Vgs 1.4Ohm @ 410mA, 4.5V
• Power Dissipation (Max) 310mW (Ta), 1.67W (Tc)
• Vgs(th) (Max) @ Id 950mV @ 250µA
• Supplier Device Package DFN1006B-3
• Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
• Vgs (Max) ±8V
• Drain to Source Voltage (Vdss) 30 V
• Gate Charge (Qg) (Max) @ Vgs 1.2 nC @ 4.5 V
• Input Capacitance (Ciss) (Max) @ Vds 43.2 pF @ 15 V