- Product Model G3035L
- Brand Goford Semiconductor
- RoHS Yes
- Description P30V,RD(MAX)<59M@-10V,RD(MAX)<75
- Classification Single FETs, MOSFETs
-
PDF
- 3000 0.07
- 6000 0.07
- 9000 0.06
- 30000 0.06
- 75000 0.05
- 150000 0.05
Technical Details
- Package / Case TO-236-3, SC-59, SOT-23-3
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type P-Channel
- Current - Continuous Drain (Id) @ 25°C 4.1A (Ta)
- Rds On (Max) @ Id, Vgs 59mOhm @ 2.1A, 10V
- Power Dissipation (Max) 1.4W (Ta)
- Vgs(th) (Max) @ Id 2V @ 250µA
- Supplier Device Package SOT-23-3
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 30 V
- Gate Charge (Qg) (Max) @ Vgs 12.5 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 650 pF @ 15 V
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