- Product Model 2301
- Brand Goford Semiconductor
- RoHS Yes
- Description P20V,RD(MAX)<56M@-4.5V,RD(MAX)<8
- Classification Single FETs, MOSFETs
-
PDF
- 3000 0.07
- 6000 0.06
- 9000 0.05
- 30000 0.05
- 75000 0.04
- 150000 0.04
Technical Details
- Package / Case TO-236-3, SC-59, SOT-23-3
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type P-Channel
- Current - Continuous Drain (Id) @ 25°C 3A (Tc)
- Rds On (Max) @ Id, Vgs 56mOhm @ 1.7A, 4.5V
- Power Dissipation (Max) 1W (Tc)
- Vgs(th) (Max) @ Id 900mV @ 250µA
- Supplier Device Package SOT-23
- Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
- Vgs (Max) ±10V
- Drain to Source Voltage (Vdss) 20 V
- Gate Charge (Qg) (Max) @ Vgs 12 nC @ 2.5 V
- Input Capacitance (Ciss) (Max) @ Vds 405 pF @ 10 V
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