- Product Model G12P03D3
- Brand Goford Semiconductor
- RoHS Yes
- Description P30V,RD(MAX)<20M@-10V,RD(MAX)<26
- Classification Single FETs, MOSFETs
-
PDF
- 5000 0.19
- 10000 0.18
- 25000 0.17
- 50000 0.17
Technical Details
- Package / Case 8-PowerVDFN
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type P-Channel
- Current - Continuous Drain (Id) @ 25°C 12A (Tc)
- Rds On (Max) @ Id, Vgs 20mOhm @ 6A, 10V
- Power Dissipation (Max) 30W (Tc)
- Vgs(th) (Max) @ Id 2V @ 250µA
- Supplier Device Package 8-DFN (3.15x3.05)
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 30 V
- Gate Charge (Qg) (Max) @ Vgs 24.5 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 1253 pF @ 15 V
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