- Product Model G6N02L
- Brand Goford Semiconductor
- RoHS Yes
- Description MOSFET N-CH 20V 6A SOT-23-3L
- Classification Single FETs, MOSFETs
-
PDF
- 3000 0.09
- 6000 0.09
- 9000 0.08
- 30000 0.08
- 75000 0.07
- 150000 0.06
Technical Details
- Package / Case TO-236-3, SC-59, SOT-23-3
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 6A (Tc)
- Rds On (Max) @ Id, Vgs 11.3mOhm @ 3A, 4.5V
- Power Dissipation (Max) 1.8W (Tc)
- Vgs(th) (Max) @ Id 900mV @ 250µA
- Supplier Device Package SOT-23-3
- Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
- Vgs (Max) ±12V
- Drain to Source Voltage (Vdss) 20 V
- Gate Charge (Qg) (Max) @ Vgs 12.5 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 1140 pF @ 10 V
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