- Product Model SCT3160KW7TL
- Brand ROHM Semiconductor
- RoHS Yes
- Description SICFET N-CH 1200V 17A TO263-7
- Classification Single FETs, MOSFETs
- 1000 6.86
Technical Details
- Package / Case TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
- Mounting Type Surface Mount
- Operating Temperature 175°C (TJ)
- Technology SiCFET (Silicon Carbide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 17A (Tc)
- Rds On (Max) @ Id, Vgs 208mOhm @ 5A, 18V
- Power Dissipation (Max) 100W
- Vgs(th) (Max) @ Id 5.6V @ 2.5mA
- Supplier Device Package TO-263-7
- Vgs (Max) +22V, -4V
- Drain to Source Voltage (Vdss) 1200 V
- Gate Charge (Qg) (Max) @ Vgs 42 nC @ 18 V
- Input Capacitance (Ciss) (Max) @ Vds 398 pF @ 800 V
Related Products
SICFET N-CH 1200V 17A TO263-7
Inventory: 3311
SIC MOSFET N-CH 11A TO263-7
Inventory: 3651
SICFET N-CH 1700V 9.8A TO263-7
Inventory: 1525
SICFET N-CH 1.2KV 26A TO263
Inventory: 1656
1200V, 10A, THD, SILICON-CARBIDE
Inventory: 130
SICFET N-CH 1200V 56A TO263-7
Inventory: 998
SICFET N-CH 1200V 23A TO263-7
Inventory: 1905
750V, 56A, 4-PIN THD, TRENCH-STR
Inventory: 462
1200V, 40A, 7-PIN SMD, TRENCH-ST
Inventory: 796
SICFET N-CH 1200V 28.8A D2PAK-7
Inventory: 4919
