- Product Model G3R350MT12J
- Brand GeneSiC Semiconductor
- RoHS Yes
- Description SIC MOSFET N-CH 11A TO263-7
- Classification Single FETs, MOSFETs
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Technical Details
- Package / Case TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 175°C (TJ)
- Technology SiCFET (Silicon Carbide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 11A (Tc)
- Rds On (Max) @ Id, Vgs 420mOhm @ 4A, 15V
- Power Dissipation (Max) 75W (Tc)
- Vgs(th) (Max) @ Id 2.69V @ 2mA
- Supplier Device Package TO-263-7
- Drive Voltage (Max Rds On, Min Rds On) 15V
- Vgs (Max) ±15V
- Drain to Source Voltage (Vdss) 1200 V
- Gate Charge (Qg) (Max) @ Vgs 12 nC @ 15 V
- Input Capacitance (Ciss) (Max) @ Vds 334 pF @ 800 V
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