Technical Details

• Package / Case TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
• Mounting Type Surface Mount
• Operating Temperature 175°C (TJ)
• Technology SiCFET (Silicon Carbide)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 56A (Tc)
• Rds On (Max) @ Id, Vgs 52mOhm @ 20A, 18V
• Power Dissipation (Max) 267W
• Vgs(th) (Max) @ Id 5.6V @ 10mA
• Supplier Device Package TO-263-7
• Vgs (Max) +22V, -4V
• Drain to Source Voltage (Vdss) 1200 V
• Gate Charge (Qg) (Max) @ Vgs 107 nC @ 18 V
• Input Capacitance (Ciss) (Max) @ Vds 1337 pF @ 800 V