- Product Model SCTW40N120G2VAG
- Brand STMicroelectronics
- RoHS Yes
- Description SICFET N-CH 1200V 33A HIP247
- Classification Single FETs, MOSFETs
-
PDF
- 1 21.23
- 30 17.6
- 120 16.5
- 510 14.08
Technical Details
- Package / Case TO-247-3
- Mounting Type Through Hole
- Operating Temperature -55°C ~ 200°C (TJ)
- Technology SiCFET (Silicon Carbide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 33A (Tc)
- Rds On (Max) @ Id, Vgs 105mOhm @ 20A, 18V
- Power Dissipation (Max) 290W (Tc)
- Vgs(th) (Max) @ Id 5V @ 1mA
- Supplier Device Package HiP247™
- Grade Automotive
- Drive Voltage (Max Rds On, Min Rds On) 18V
- Vgs (Max) +22V, -10V
- Drain to Source Voltage (Vdss) 1200 V
- Gate Charge (Qg) (Max) @ Vgs 63 nC @ 18 V
- Input Capacitance (Ciss) (Max) @ Vds 1230 pF @ 800 V
- Qualification AEC-Q101
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