Technical Details

• Package / Case TO-247-4
• Mounting Type Through Hole
• Operating Temperature -55°C ~ 200°C (TJ)
• Technology SiC (Silicon Carbide Junction Transistor)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 30A (Tc)
• Rds On (Max) @ Id, Vgs 87mOhm @ 15A, 18V
• Power Dissipation (Max) 236W (Tc)
• Vgs(th) (Max) @ Id 4.2V @ 1mA
• Supplier Device Package TO-247-4
• Grade Automotive
• Drive Voltage (Max Rds On, Min Rds On) 15V, 18V
• Vgs (Max) +18V, -5V
• Drain to Source Voltage (Vdss) 1200 V
• Gate Charge (Qg) (Max) @ Vgs 41 nC @ 18 V
• Input Capacitance (Ciss) (Max) @ Vds 900 pF @ 850 V
• Qualification AEC-Q101