- 产品型号 AS4C128M16MD4V-062BAN
- 品牌 Alliance Memory, Inc.
- RoHS Yes
- 描述 IC DRAM 2GBIT LVSTL 200FBGA
- 分类 记忆
-
PDF
- 库存 1618
定价:
- 1 11.97
- 10 11.09
- 25 10.84
- 40 10.78
- 136 9.49
- 272 9.02
- 544 8.93
- 952 8.63
技术参数
- Package / Case 200-WFBGA
- Mounting Type Surface Mount
- Memory Size 2Gbit
- Memory Type Volatile
- Operating Temperature -40°C ~ 105°C (TC)
- Voltage - Supply 1.06V ~ 1.17V, 1.7V ~ 1.95V
- Technology SDRAM - Mobile LPDDR4X
- Clock Frequency 1.6 GHz
- Memory Format DRAM
- Supplier Device Package 200-FBGA (10x14.5)
- Grade Automotive
- Write Cycle Time - Word, Page 18ns
- Memory Interface LVSTL
- Access Time 3.5 ns
- Memory Organization 128M x 16
- Qualification AEC-Q100
- ECCN EAR99
- HTSUS 8542.32.0036
- Moisture Sensitivity Level (MSL) 3 (168 Hours)
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant
相关产品
IC DRAM 2GBIT LVSTL 200FBGA
库存: 1636
- 1: 21.21
- 10: 19.75
- 25: 19.54
- 40: 19.06
- 136: 16.73
- 272: 16.16
- 544: 15.73
IC DRAM 8GBIT LVSTLE 200FBGA
库存: 1580
- 1: 11.97
- 10: 11.09
- 25: 10.84
- 40: 10.78
- 120: 9.49
- 240: 9.02
- 480: 8.93
- 960: 8.63
IC DRAM 2GBIT LVSTL 200TFBGA
库存: 1634
- 1: 8.83
- 10: 8.13
- 25: 7.96
- 40: 7.93
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- 272: 6.9
- 544: 6.56
- 952: 6.34
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库存: 1500
- 1: 22.58
- 10: 20.82
- 25: 19.89
- 176: 17.78
- 352: 16.96
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IC DRAM 4GBIT 2.133GHZ WFBGA
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IC DRAM 4GBIT LVSTL 11 200WFBGA
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- 10: 7.11
- 25: 6.96
- 40: 6.94
- 144: 6.23
- 288: 6.04
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- 1008: 5.54
