- 产品型号 MT53E256M16D1DS-046 AAT:B
- 品牌 Micron Technology
- RoHS Yes
- 描述 IC DRAM 4GBIT 2.133GHZ WFBGA
- 分类 记忆
-
PDF
- 库存 3383
- 1 14.11
技术参数
- Package / Case 200-WFBGA
- Mounting Type Surface Mount
- Memory Size 4Gbit
- Memory Type Volatile
- Operating Temperature -40°C ~ 105°C (TC)
- Voltage - Supply 1.1V
- Technology SDRAM - Mobile LPDDR4
- Clock Frequency 2.133 GHz
- Memory Format DRAM
- Supplier Device Package 200-WFBGA (10x14.5)
- Grade Automotive
- Memory Organization 256M x 16
- DigiKey Programmable Not Verified
- Qualification AEC-Q100
- ECCN EAR99
- HTSUS 8542.32.0036
- Moisture Sensitivity Level (MSL) 3 (168 Hours)
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant
相关产品
IC DRAM 2GBIT LVSTL 200TFBGA
库存: 1634
- 1: 8.83
- 10: 8.13
- 25: 7.96
- 40: 7.93
- 136: 7.12
- 272: 6.9
- 544: 6.56
- 952: 6.34
IC DRAM 8GBIT PARALLEL 200TFBGA
库存: 1766
- 1: 23.46
- 10: 21.85
- 25: 21.61
- 40: 21.08
- 136: 18.5
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- 544: 17.4
IC FLASH 2GBIT PARALLEL 63VFBGA
库存: 5099
- 1: 2.65
- 10: 2.38
- 25: 2.35
- 40: 2.34
- 80: 2.09
- 230: 2.02
- 440: 2.02
- 1260: 1.88
- 5040: 1.7
IC DRAM 1GBIT PAR 96FBGA
库存: 2775
- 1: 4.85
- 10: 4.4
- 25: 4.31
- 50: 4.28
- 100: 3.84
- 250: 3.83
- 500: 3.69
- 1224: 3.5
IC DRAM 4GBIT 2.133GHZ WFBGA
库存: 1500
- 2000: 9.81
IC DRAM 8GBIT 2.133GHZ 200WFBGA
库存: 1967
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IC DRAM 8GBIT 2.133GHZ 200WFBGA
库存: 2841
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TRANS NPN 45V 0.1A 3X2DFN
库存: 9379
- 8000: 0.06
- 16000: 0.05
- 24000: 0.05
- 56000: 0.04
- 200000: 0.04
