- 产品型号 IS43LQ16128A-062TBLI
- 品牌 ISSI (Integrated Silicon Solution, Inc.)
- RoHS Yes
- 描述 IC DRAM 2GBIT LVSTL 200TFBGA
- 分类 记忆
-
PDF
- 库存 1634
- 1 8.83
- 10 8.13
- 25 7.96
- 40 7.93
- 136 7.12
- 272 6.9
- 544 6.56
- 952 6.34
技术参数
- Package / Case 200-TFBGA
- Mounting Type Surface Mount
- Memory Size 2Gbit
- Memory Type Volatile
- Operating Temperature -40°C ~ 95°C (TC)
- Voltage - Supply 1.06V ~ 1.17V, 1.7V ~ 1.95V
- Technology SDRAM - Mobile LPDDR4
- Clock Frequency 1.6 GHz
- Memory Format DRAM
- Supplier Device Package 200-TFBGA (10x14.5)
- Memory Interface LVSTL
- Memory Organization 128M x 16
- DigiKey Programmable Not Verified
- ECCN EAR99
- HTSUS 8542.32.0036
- Moisture Sensitivity Level (MSL) 3 (168 Hours)
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant
相关产品
IC DRAM 2GBIT LVSTL 200FBGA
库存: 1618
- 1: 11.97
- 10: 11.09
- 25: 10.84
- 40: 10.78
- 136: 9.49
- 272: 9.02
- 544: 8.93
- 952: 8.63
2G, 1.06-1.17/1.70-1.95V, LPDDR4
库存: 1500
- 2500: 6.12
IC DRAM 4GBIT LVSTL 200TFBGA
库存: 1565
- 1: 12.36
- 10: 11.45
- 25: 11.19
- 40: 11.13
- 136: 9.79
- 272: 9.31
- 544: 9.21
- 952: 8.91
4G, 1.06-1.17/1.70-1.95V, LPDDR4
库存: 1510
- 1: 11.88
- 10: 10.92
- 25: 10.46
- 80: 9.22
- 230: 8.77
- 544: 8.2
- 1088: 7.52
IC DRAM 8GBIT PARALLEL 200TFBGA
库存: 1766
- 1: 23.46
- 10: 21.85
- 25: 21.61
- 40: 21.08
- 136: 18.5
- 272: 17.88
- 544: 17.4
IC DRAM 8GBIT 2.133GHZ 200WFBGA
库存: 2711
- 1: 9.98
- 10: 9.25
- 25: 9.04
- 40: 8.99
- 80: 7.91
- 230: 7.52
- 440: 7.44
- 1360: 7.2
IC DRAM 4GBIT 2.133GHZ WFBGA
库存: 3383
- 1: 14.11
LPDDR4 2GB X16 3200MHZ CL22 10X1
库存: 3500
- 2000: 7.4
IC DRAM 4GBIT LVSTL 11 200WFBGA
库存: 1500
- 1: 7.73
- 10: 7.11
- 25: 6.96
- 40: 6.94
- 144: 6.23
- 288: 6.04
- 576: 5.74
- 1008: 5.54
