技术参数

• Package / Case 8-LDFN Exposed Pad
• Mounting Type Surface Mount
• Operating Temperature -55°C ~ 150°C (TJ)
• Technology GaNFET (Gallium Nitride)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 10A (Tc)
• Power Dissipation (Max) 62.5W (Tc)
• Vgs(th) (Max) @ Id 1.6V @ 960µA
• Supplier Device Package PG-LSON-8-1
• Vgs (Max) -10V
• Drain to Source Voltage (Vdss) 600 V
• Input Capacitance (Ciss) (Max) @ Vds 157 pF @ 400 V
• ECCN EAR99
• HTSUS 8541.29.0095
• REACH Status REACH Unaffected
• RoHS Status ROHS3 Compliant