技术参数

• Package / Case 8-VDFN Exposed Pad
• Mounting Type Surface Mount, Wettable Flank
• Operating Temperature -55°C ~ 150°C (TJ)
• Technology GaNFET (Gallium Nitride)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 17A (Ta)
• Rds On (Max) @ Id, Vgs 140mOhm @ 5A, 6V
• Power Dissipation (Max) 113W (Ta)
• Vgs(th) (Max) @ Id 2.5V @ 17.2mA
• Supplier Device Package DFN8080-8
• Drive Voltage (Max Rds On, Min Rds On) 6V
• Vgs (Max) +7V, -1.4V
• Drain to Source Voltage (Vdss) 650 V
• Gate Charge (Qg) (Max) @ Vgs 3.5 nC @ 6 V
• Input Capacitance (Ciss) (Max) @ Vds 125 pF @ 400 V
• ECCN EAR99
• HTSUS 8541.29.0095
• Moisture Sensitivity Level (MSL) 3 (168 Hours)
• REACH Status REACH Unaffected
• RoHS Status ROHS3 Compliant