技术参数

• Package / Case 8-PowerTDFN
• Mounting Type Surface Mount
• Operating Temperature -40°C ~ 150°C (TJ)
• Technology GaNFET (Gallium Nitride)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 8.2A (Tc)
• Power Dissipation (Max) 41.6W (Tc)
• Vgs(th) (Max) @ Id 1.6V @ 530µA
• Supplier Device Package PG-TSON-8-7
• Vgs (Max) -10V
• Drain to Source Voltage (Vdss) 600 V
• Input Capacitance (Ciss) (Max) @ Vds 87.7 pF @ 400 V
• ECCN EAR99
• HTSUS 8541.29.0095
• Moisture Sensitivity Level (MSL) 3 (168 Hours)
• REACH Status REACH Unaffected
• RoHS Status ROHS3 Compliant