- Product Model FDP050AN06A0
- Brand Sanyo Semiconductor/onsemi
- RoHS Yes
- Description MOSFET N-CH 60V 18A/80A TO220-3
- Categories Single FETs, MOSFETs
-
PDF
- In Stock 3804
- 1 2.9
- 50 2.33
- 100 1.91
- 500 1.62
- 1000 1.37
- 2000 1.31
- 5000 1.26
Technical Details
- Package / Case TO-220-3
- Mounting Type Through Hole
- Operating Temperature -55°C ~ 175°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 18A (Ta), 80A (Tc)
- Rds On (Max) @ Id, Vgs 5mOhm @ 80A, 10V
- Power Dissipation (Max) 245W (Tc)
- Vgs(th) (Max) @ Id 4V @ 250µA
- Supplier Device Package TO-220-3
- Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 60 V
- Gate Charge (Qg) (Max) @ Vgs 80 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 3900 pF @ 25 V
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) Not Applicable
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant
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