- Product Model FDP2D3N10C
- Brand Sanyo Semiconductor/onsemi
- RoHS Yes
- Description MOSFET N-CH 100V 222A TO220-3
- Categories Single FETs, MOSFETs
-
PDF
- In Stock 1795
- 1 6.21
- 50 4.96
- 100 4.43
- 500 3.91
- 1000 3.52
- 2000 3.3
Technical Details
- Package / Case TO-220-3
- Mounting Type Through Hole
- Operating Temperature -55°C ~ 175°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 222A (Tc)
- Rds On (Max) @ Id, Vgs 2.3mOhm @ 100A, 10V
- Power Dissipation (Max) 214W (Tc)
- Vgs(th) (Max) @ Id 4V @ 700µA
- Supplier Device Package TO-220-3
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 100 V
- Gate Charge (Qg) (Max) @ Vgs 152 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 11180 pF @ 50 V
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) Not Applicable
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant
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