- Product Model IPP60R199CPXKSA1
- Brand IR (Infineon Technologies)
- RoHS Yes
- Description MOSFET N-CH 650V 16A TO220-3
- Categories Single FETs, MOSFETs
-
PDF
- In Stock 1932
- 1 3.99
- 50 3.16
- 100 2.71
- 500 2.41
- 1000 2.06
- 2000 1.94
- 5000 1.86
Technical Details
- Package / Case TO-220-3
- Mounting Type Through Hole
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 16A (Tc)
- Rds On (Max) @ Id, Vgs 199mOhm @ 9.9A, 10V
- Power Dissipation (Max) 139W (Tc)
- Vgs(th) (Max) @ Id 3.5V @ 660µA
- Supplier Device Package PG-TO220-3
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 650 V
- Gate Charge (Qg) (Max) @ Vgs 43 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 1520 pF @ 100 V
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant
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