- Product Model TPH3205WSBQA
- Brand Transphorm
- RoHS No
- Description GANFET N-CH 650V 35A TO247-3
- Categories Single FETs, MOSFETs
-
PDF
- In Stock 1500
Technical Details
- Package / Case TO-247-3
- Mounting Type Through Hole
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology GaNFET (Gallium Nitride)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 35A (Tc)
- Rds On (Max) @ Id, Vgs 62mOhm @ 22A, 8V
- Power Dissipation (Max) 125W (Tc)
- Vgs(th) (Max) @ Id 2.6V @ 700µA
- Supplier Device Package TO-247-3
- Grade Automotive
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±18V
- Drain to Source Voltage (Vdss) 650 V
- Gate Charge (Qg) (Max) @ Vgs 42 nC @ 8 V
- Input Capacitance (Ciss) (Max) @ Vds 2200 pF @ 400 V
- Qualification AEC-Q101
- California Prop 65 California Prop 65 Information
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
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