- Product Model TP65H015G5WS
- Brand Transphorm
- RoHS Yes
- Description 650 V 95 A GAN FET
- Categories Single FETs, MOSFETs
-
PDF
- In Stock 2213
- 1 32.26
- 30 26.74
- 120 25.07
Technical Details
- Package / Case TO-247-3
- Mounting Type Through Hole
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology GaNFET (Gallium Nitride)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 93A (Tc)
- Rds On (Max) @ Id, Vgs 18mOhm @ 60A, 10V
- Power Dissipation (Max) 266W (Tc)
- Vgs(th) (Max) @ Id 4.8V @ 2mA
- Supplier Device Package TO-247-3
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 650 V
- Gate Charge (Qg) (Max) @ Vgs 100 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 5218 pF @ 400 V
- California Prop 65 California Prop 65 Information
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- RoHS Status ROHS3 Compliant
Related Products
650V 45 M SIC MOSFET
In Stock: 1975
- 1: 19.68
- 50: 15.93
- 100: 15
- 500: 13.59
GAN041-650WSB/SOT429/TO-247
In Stock: 1763
- 1: 18.03
- 10: 15.88
- 300: 13.31
- 600: 12.45
100 V, 3.2 MOHM GALLIUM NITRIDE
In Stock: 2315
- 1500: 1.84
- 3000: 1.73
AUTOMOTIVE_COOLMOS PG-TO247-3
In Stock: 1631
- 1: 22.11
- 10: 19.64
- 240: 16.04
GANFET N-CH 650V 46.5A TO247-3
In Stock: 2090
- 1: 17.94
- 30: 14.53
- 120: 13.67
- 510: 12.39
650 V 46.5 GAN FET
In Stock: 1781
- 1: 19.32
- 30: 15.64
- 120: 14.72
- 510: 13.34
GANFET N-CH 650V 46.5A TO247-3
In Stock: 1802
- 1: 14.05
- 30: 12.81
650 V 34 A GAN FET
In Stock: 1713
- 1: 14.36
- 30: 11.62
- 120: 10.94
- 510: 9.91
- 1020: 9.09
GANFET N-CH 900V 34A TO247-3
In Stock: 1607
- 1: 17.29
- 30: 13.99
MOSFET N-CH 650V 120A TO247-4
In Stock: 3194
- 1: 74.4
- 30: 65.1
- 120: 60.45
