- Product Model TP65H050G4WS
- Brand Transphorm
- RoHS Yes
- Description 650 V 34 A GAN FET
- Categories Single FETs, MOSFETs
-
PDF
- In Stock 1713
Pricing:
- 1 14.36
- 30 11.62
- 120 10.94
- 510 9.91
- 1020 9.09
Technical Details
- Package / Case TO-247-3
- Mounting Type Through Hole
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology GaNFET (Gallium Nitride)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 34A (Tc)
- Rds On (Max) @ Id, Vgs 60mOhm @ 22A, 10V
- Power Dissipation (Max) 119W (Tc)
- Vgs(th) (Max) @ Id 4.8V @ 700µA
- Supplier Device Package TO-247-3
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 650 V
- Gate Charge (Qg) (Max) @ Vgs 24 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 1000 pF @ 400 V
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 3 (168 Hours)
- RoHS Status ROHS3 Compliant
Related Products
GANFET N-CH 650V 15A TO220
In Stock: 1588
- 1: 7.5
650 V 95 A GAN FET
In Stock: 2213
- 1: 32.26
- 30: 26.74
- 120: 25.07
GANFET N-CH 650V 46.5A TO247-3
In Stock: 2090
- 1: 17.94
- 30: 14.53
- 120: 13.67
- 510: 12.39
GANFET N-CH 650V 34A TO247-3
In Stock: 1817
- 1: 17.67
- 30: 14.3
- 120: 13.46
- 510: 12.2
GANFET N-CH 650V 36A TO247-3
In Stock: 1543
- 1: 18.98
- 30: 15.37
- 120: 14.46
- 510: 13.11
GANFET N-CH 650V 25A PQFN88
In Stock: 13835
- 500: 7.44
