• In Stock 4810
Pricing:
  • 1000 1.33
  • 2000 1.27
  • 5000 1.22

Technical Details

  • Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Mounting Type Surface Mount
  • Speed No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr) 0 ns
  • Technology SiC (Silicon Carbide) Schottky
  • Capacitance @ Vr, F 190pF @ 1V, 1MHz
  • Current - Average Rectified (Io) 6A
  • Supplier Device Package PG-TO263-2
  • Operating Temperature - Junction -55°C ~ 175°C
  • Voltage - DC Reverse (Vr) (Max) 650 V
  • Voltage - Forward (Vf) (Max) @ If 1.8 V @ 6 A
  • Current - Reverse Leakage @ Vr 1.1 mA @ 650 V
  • ECCN EAR99
  • HTSUS 8541.10.0080
  • Moisture Sensitivity Level (MSL) 1 (Unlimited)
  • REACH Status REACH Unaffected
  • RoHS Status ROHS3 Compliant

Related Products


DIODE GEN PURP 200V 2A DO214AA

In Stock: 170912

  • 750: 0.14
  • 1500: 0.12

DIODE SIL CARB 650V 12A TO220-1

In Stock: 2014

  • 1: 5.05
  • 50: 4
  • 100: 3.43
  • 500: 3.05
  • 1000: 2.61
  • 2000: 2.46

DIODE SIL CARB 650V 20A TO220-1

In Stock: 2364

  • 1: 7.41
  • 50: 5.91
  • 100: 5.29
  • 500: 4.67
  • 1000: 4.2
  • 2000: 3.94

DIODE SIL CARB 650V 8A TO263-2

In Stock: 2497

  • 1000: 1.74
  • 2000: 1.64
  • 5000: 1.57

DIODE SIL CARB 650V 10A TO263-2

In Stock: 3680

  • 1000: 2.34
  • 2000: 2.21

DIODE SIL CARB 650V 12A TO263-2

In Stock: 2028

  • 1000: 2.78
  • 2000: 2.62

DIODE SIL CARB 650V 10A TO247-3

In Stock: 1632

  • 1: 8.6
  • 30: 6.86
  • 120: 6.14
  • 510: 5.42
  • 1020: 4.88
  • 2010: 4.57

SILICON CARBIDE MOSFET PG-TO263-

In Stock: 1500

  • 1000: 11.14

SILICON CARBIDE MOSFET

In Stock: 3431

  • 2000: 10.74
Top