- Product Model IMBG65R022M1HXTMA1
- Brand IR (Infineon Technologies)
- RoHS Yes
- Description SILICON CARBIDE MOSFET PG-TO263-
- Categories Single FETs, MOSFETs
-
PDF
- In Stock 1500
- 1000 11.14
Technical Details
- Package / Case TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 175°C (TJ)
- Technology SiCFET (Silicon Carbide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 64A (Tc)
- Rds On (Max) @ Id, Vgs 30mOhm @ 41.1A, 18V
- Power Dissipation (Max) 300W (Tc)
- Vgs(th) (Max) @ Id 5.7V @ 12.3mA
- Supplier Device Package PG-TO263-7-12
- Drive Voltage (Max Rds On, Min Rds On) 18V
- Vgs (Max) +23V, -5V
- Drain to Source Voltage (Vdss) 650 V
- Gate Charge (Qg) (Max) @ Vgs 67 nC @ 18 V
- Input Capacitance (Ciss) (Max) @ Vds 2288 pF @ 400 V
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant
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