• In Stock 1632
Pricing:
  • 1 8.6
  • 30 6.86
  • 120 6.14
  • 510 5.42
  • 1020 4.88
  • 2010 4.57

Technical Details

  • Package / Case TO-247-3
  • Mounting Type Through Hole
  • Speed No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr) 0 ns
  • Technology SiC (Silicon Carbide) Schottky
  • Capacitance @ Vr, F 300pF @ 1V, 1MHz
  • Current - Average Rectified (Io) 10A
  • Supplier Device Package PG-TO247-3
  • Operating Temperature - Junction -55°C ~ 175°C
  • Voltage - DC Reverse (Vr) (Max) 650 V
  • Voltage - Forward (Vf) (Max) @ If 1.7 V @ 10 A
  • Current - Reverse Leakage @ Vr 180 µA @ 650 V
  • ECCN EAR99
  • HTSUS 8541.10.0080
  • Moisture Sensitivity Level (MSL) 1 (Unlimited)
  • REACH Status REACH Unaffected
  • RoHS Status ROHS3 Compliant

Related Products


DIODE SIL CARB 650V 12A TO220-1

In Stock: 2014

  • 1: 5.05
  • 50: 4
  • 100: 3.43
  • 500: 3.05
  • 1000: 2.61
  • 2000: 2.46

DIODE SIL CARB 650V 6A TO263-2

In Stock: 4810

  • 1000: 1.33
  • 2000: 1.27
  • 5000: 1.22

DIODE SIL CARB 650V 8A TO263-2

In Stock: 2497

  • 1000: 1.74
  • 2000: 1.64
  • 5000: 1.57

DIODE SIL CARB 650V 10A TO263-2

In Stock: 3680

  • 1000: 2.34
  • 2000: 2.21

DIODE SIL CARB 650V 12A TO263-2

In Stock: 2028

  • 1000: 2.78
  • 2000: 2.62
Top