- Product Model NTMT045N065SC1
- Brand Sanyo Semiconductor/onsemi
- RoHS Yes
- Description SILICON CARBIDE (SIC) MOSFET - 3
- Categories Single FETs, MOSFETs
-
PDF
- In Stock 1809
- 3000 6.32
Technical Details
- Package / Case 4-PowerTSFN
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 175°C (TJ)
- Technology SiCFET (Silicon Carbide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 55A (Tc)
- Rds On (Max) @ Id, Vgs 50mOhm @ 25A, 18V
- Power Dissipation (Max) 187W (Tc)
- Vgs(th) (Max) @ Id 4.3V @ 8mA
- Supplier Device Package 4-TDFN (8x8)
- Drive Voltage (Max Rds On, Min Rds On) 15V, 18V
- Vgs (Max) +22V, -8V
- Drain to Source Voltage (Vdss) 650 V
- Gate Charge (Qg) (Max) @ Vgs 105 nC @ 18 V
- Input Capacitance (Ciss) (Max) @ Vds 1870 pF @ 325 V
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant
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