- Product Model NTH4L060N065SC1
- Brand Sanyo Semiconductor/onsemi
- RoHS Yes
- Description SIC MOS TO247-4L 650V
- Categories Single FETs, MOSFETs
-
PDF
- In Stock 2160
- 1 11.22
- 30 8.96
- 120 8.01
- 510 7.07
- 1020 6.36
Technical Details
- Package / Case TO-247-4
- Mounting Type Through Hole
- Operating Temperature -55°C ~ 175°C (TJ)
- Technology SiCFET (Silicon Carbide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 47A (Tc)
- Rds On (Max) @ Id, Vgs 70mOhm @ 20A, 18V
- Power Dissipation (Max) 176W (Tc)
- Vgs(th) (Max) @ Id 4.3V @ 6.5mA
- Supplier Device Package TO-247-4L
- Drive Voltage (Max Rds On, Min Rds On) 15V, 18V
- Vgs (Max) +22V, -8V
- Drain to Source Voltage (Vdss) 650 V
- Gate Charge (Qg) (Max) @ Vgs 74 nC @ 18 V
- Input Capacitance (Ciss) (Max) @ Vds 1473 pF @ 325 V
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) Not Applicable
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant
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