• In Stock 2015
Pricing:
  • 1 10.53
  • 30 8.41
  • 120 7.52
  • 510 6.64
  • 1020 5.97

Technical Details

  • Package / Case TO-247-3
  • Mounting Type Through Hole
  • Operating Temperature -55°C ~ 175°C (TJ)
  • Technology SiCFET (Silicon Carbide)
  • FET Type N-Channel
  • Current - Continuous Drain (Id) @ 25°C 47A (Tc)
  • Rds On (Max) @ Id, Vgs 70mOhm @ 20A, 18V
  • Power Dissipation (Max) 176W (Tc)
  • Vgs(th) (Max) @ Id 4.3V @ 6.5mA
  • Supplier Device Package TO-247-3
  • Drive Voltage (Max Rds On, Min Rds On) 15V, 18V
  • Vgs (Max) +22V, -8V
  • Drain to Source Voltage (Vdss) 650 V
  • Gate Charge (Qg) (Max) @ Vgs 74 nC @ 18 V
  • Input Capacitance (Ciss) (Max) @ Vds 1473 pF @ 325 V
  • ECCN EAR99
  • HTSUS 8541.29.0095
  • Moisture Sensitivity Level (MSL) Not Applicable
  • REACH Status REACH Unaffected
  • RoHS Status ROHS3 Compliant

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