- Product Model IMBG120R090M1HXTMA1
- Brand IR (Infineon Technologies)
- RoHS Yes
- Description SICFET N-CH 1.2KV 26A TO263
- Categories Single FETs, MOSFETs
-
PDF
- In Stock 3156
- 1000 6.83
Technical Details
- Package / Case TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 175°C (TJ)
- Technology SiCFET (Silicon Carbide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 26A (Tc)
- Rds On (Max) @ Id, Vgs 125mOhm @ 8.5A, 18V
- Power Dissipation (Max) 136W (Tc)
- Vgs(th) (Max) @ Id 5.7V @ 3.7mA
- Supplier Device Package PG-TO263-7-12
- Vgs (Max) +18V, -15V
- Drain to Source Voltage (Vdss) 1200 V
- Gate Charge (Qg) (Max) @ Vgs 23 nC @ 18 V
- Input Capacitance (Ciss) (Max) @ Vds 763 pF @ 800 V
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant
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